Silicon University / Track A / Pillar 02 · Wafering & Ingots
06
Edge Profiling, Lapping & Stress-Relief Etching
Step 06 of 24 · Ingot Conditioning, Wafering & Mechanical Damage Remediation · three tiers, 44 min total.
Ingot phase
Topic 2.3
3 articles
Tier 1 · Core FundamentalsWafer Edge Profiling, Lapping, and Stress-Relief Etching Fundamentals
Explains why freshly sawn raw wafers require edge rounding to prevent chipping, double-sided planetary lapping to achieve parallel surfaces, and chemical etching to strip…
Tier 2 · Equipment & KinematicsLapping & Etching Kinematics: Planetary Carrier Dynamics, Plate Tribology, and Bath Chemistry Control
Operational design of planetary carrier gear systems for double-sided lapping with alumina/silicon carbide slurries, followed by high-throughput immersion acid (HF/HNO_3)…
Tier 3 · Deep-Dive & Yield EngineeringPhysics of Lapping & Etching: Tribochemistry, Anisotropic Dissolution Kinetics, and Complete SSD Elimination
Comparative chemical analysis of isotropic acidic etching (HNO_3 oxidation followed by HF dissolution) versus anisotropic alkaline etching (KOH/TMAH), detailing removal r…