Silicon University / Track A / Pillar 03 · CMP & Planarization
07
Oxide & Polysilicon CMP
Step 07 of 24 · Planarization Tribology & Chemical Mechanical Polishing · three tiers, 55 min total.
Wafering phase
Topic 3.1
3 articles
Tier 1 · Core FundamentalsOxide and Polysilicon CMP Fundamentals: Achieving Global Planarization
Demystifies CMP by explaining how chemical softening of the wafer surface combined with gentle abrasive mechanical sweeping achieves absolute mirror-like planarity requir…
Tier 2 · Equipment & KinematicsPrestonian Kinematics & CMP Tool Architecture: Pressure & Velocity Distribution
Hardware breakdown of multi-head CMP polishing tools, detailing platen rotation, carrier head pneumatic zone pressure profiling, retaining ring dynamics, and point-of-use…
Tier 3 · Deep-Dive & Yield EngineeringTribology & Luo-Dornfeld Abrasive Mechanics: Micro-Scale Material Removal
Advanced tribological evaluation of Preston's Law (MRR = K_p P V), non-Prestonian non-Newtonian slurry hydrodynamics, Luo-Dornfeld contact mechanics, and silica/ceria slu…