Silicon University / Track A / Pillar 03 · CMP & Planarization
08
Copper Damascene & Barrier CMP
Step 08 of 24 · Planarization Tribology & Chemical Mechanical Polishing · three tiers, 60 min total.
Wafering phase
Topic 3.2
3 articles
Tier 1 · Core FundamentalsCopper Damascene & Barrier CMP Fundamentals: Multi-Step BEOL Integration
Covers the unique challenges of copper metallization, explaining how multi-step CMP polishing selectively removes excess electroplated copper and tantalum/tantalum nitrid…
Tier 2 · Equipment & KinematicsBarrier Slurry Chemistry & Galvanic Corrosion: Electrochemical Control
Architectural walkthrough of 3-platen copper CMP platforms, featuring eddy-current and motor-torque endpoint detection, inline slurry blending chemical delivery loops, an…
Tier 3 · Deep-Dive & Yield EngineeringDishing & Erosion Tribochemical Models: Sub-10nm Interconnect Topography
Comprehensive analysis of copper dishing in wide trenches, oxide erosion in dense array lines, corrosion inhibitor passivation dynamics (BTA), and galvanic potential diff…