Silicon University / Track A / Pillar 07 · Deposition & Thermal
20
ALD & High-k Metal Gate Stacks
Step 20 of 24 · Dielectric Deposition, Gate Stack Engineering & Thermal Processing · three tiers, 59 min total.
FEOL phase
Topic 7.2
3 articles
Tier 1 · Core FundamentalsAtomic Layer Deposition (ALD) & High-k Metal Gate (HKMG) Fundamentals
Covers the transition from ultra-thin SiO_2 gate oxides to hafnium-based high-k dielectrics (HfO_2) and metal gates (TiN/TaN), enabling continued transistor scaling witho…
Tier 2 · Equipment & KinematicsALD Reactor Hardware: Precursor Pulsing, Purging & Chamber Kinematics
Mechanical design of cross-flow and showerhead ALD reactors, fast-actuating precursor delivery solenoids (<10ms), organometallic liquid precursor vaporizers (TDMAH), and …
Tier 3 · Deep-Dive & Yield EngineeringInterface Engineering, Dipole Formation & Work Function Tuning in HKMG Stacks
Quantitative analysis of self-limiting ligand-exchange reactions between metal alkyl precursors and surface hydroxyls (-OH), precursor thermal decomposition boundaries, d…