Silicon University / Track A / Pillar 06 · Plasma Etching
16
Reactive Ion Etching & Plasma Physics
Step 16 of 24 · Plasma Etching & Atomic-Scale Material Removal · three tiers, 55 min total.
FEOL phase
Topic 6.1
3 articles
Tier 1 · Core FundamentalsPlasma Etching & Reactive Ion Etching (RIE): Core Fundamentals
Introduces plasma etching, explaining how energetic ions combined with reactive chemical gas radicals carve sharp, high-aspect-ratio vertical trenches into semiconductor …
Tier 2 · Equipment & KinematicsICP/CCP Etch Chamber Mechanics, Dual-Frequency RF Bias & Plasma Kinematics
Detailed mechanical and electrical breakdown of ICP vs. CCP etch chambers, detailing dual-frequency RF generators (13.56MHz / 2MHz), electrostatic chuck (ESC) helium back…
Tier 3 · Deep-Dive & Yield EngineeringPlasma Sheath Physics, Bohm Criterion & Sidewall Passivation Kinetics
Advanced plasma physics covering RF sheath formation, ion energy distribution functions (IEDF), fluorocarbon polymer sidewall passivation mechanisms, and Aspect-Ratio Dep…