Silicon University / Track A / Pillar 06 · Plasma Etching
18
High-Aspect-Ratio Plasma Etching
Step 18 of 24 · Plasma Etching & Atomic-Scale Material Removal · three tiers, 56 min total.
FEOL phase
Topic 6.3
3 articles
Tier 1 · Core FundamentalsHigh-Aspect-Ratio (HAR) Plasma Etching: Core Principles & Challenges
Explains the unique challenges of etching vertical features 50 to 100 times deeper than they are wide, such as 3D NAND memory holes and Through-Silicon Vias (TSVs).…
Tier 2 · Equipment & KinematicsHAR Etcher Hardware: Cryogenic Sub-Zero Cooling & High-Voltage Pulsed Bias
Tool design for Deep Reactive Ion Etching (DRIE), focusing on high-speed directional gas switching valves for the Bosch process (SF_6 etch / C_4F_8 passivation) and ultra…
Tier 3 · Deep-Dive & Yield EngineeringDeep-Trench Ion Transport, ARDE Modeling, Striation & Twisting Physics
Kinetic evaluation of Knudsen diffusion limitations in deep trenches, aspect-ratio charging effects causing electron deflection, sidewall bowing mechanics, and fluorocarb…